實驗名稱：聚酰(xian)亞胺薄(bo)膜外空間電荷測試(shi)試(shi)驗

　　研究方向：隨(sui)(sui)著(zhu)我國邁入“十(shi)四五(wu)”規劃和(he)(he)(he)(he)二〇三五(wu)年遠景目標(biao)的(de)(de)(de)重要(yao)階段，各(ge)行業各(ge)領域對電(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)能(neng)(neng)源的(de)(de)(de)依賴程(cheng)度越(yue)來(lai)越(yue)高(gao)(gao)(gao)。高(gao)(gao)(gao)依賴程(cheng)度背后伴隨(sui)(sui)而來(lai)的(de)(de)(de)是對電(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)設(she)備可靠性(xing)(xing)(xing)(xing)和(he)(he)(he)(he)使用壽命的(de)(de)(de)嚴峻考驗，隨(sui)(sui)著(zhu)現代電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)技術和(he)(he)(he)(he)超/特高(gao)(gao)(gao)壓技術的(de)(de)(de)飛速(su)發展(zhan)，高(gao)(gao)(gao)性(xing)(xing)(xing)(xing)能(neng)(neng)絕緣(yuan)材料在電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)設(she)備和(he)(he)(he)(he)高(gao)(gao)(gao)壓電(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)設(she)備中的(de)(de)(de)應(ying)(ying)用越(yue)來(lai)越(yue)廣泛。據相(xiang)關統計，電(dian)(dian)(dian)(dian)(dian)(dian)網(wang)發生事(shi)故的(de)(de)(de)主要(yao)原因之一是電(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)設(she)備出現故障，而其中絕緣(yuan)材料的(de)(de)(de)損(sun)壞又占絕大多數。聚(ju)酰(xian)亞(ya)胺（Polyimide，PI）作為一種具(ju)(ju)有(you)優(you)良電(dian)(dian)(dian)(dian)(dian)(dian)氣性(xing)(xing)(xing)(xing)能(neng)(neng)、高(gao)(gao)(gao)溫穩定性(xing)(xing)(xing)(xing)、化(hua)學穩定性(xing)(xing)(xing)(xing)和(he)(he)(he)(he)較高(gao)(gao)(gao)抗水解性(xing)(xing)(xing)(xing)的(de)(de)(de)高(gao)(gao)(gao)分(fen)(fen)子(zi)材料，廣泛應(ying)(ying)用于高(gao)(gao)(gao)溫電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)元件、高(gao)(gao)(gao)壓電(dian)(dian)(dian)(dian)(dian)(dian)力(li)(li)(li)設(she)備、飛行器等(deng)電(dian)(dian)(dian)(dian)(dian)(dian)氣和(he)(he)(he)(he)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)工程(cheng)領域。然而，隨(sui)(sui)著(zhu)電(dian)(dian)(dian)(dian)(dian)(dian)氣和(he)(he)(he)(he)電(dian)(dian)(dian)(dian)(dian)(dian)子(zi)設(she)備的(de)(de)(de)迅速(su)發展(zhan)，越(yue)來(lai)越(yue)多的(de)(de)(de)設(she)備需要(yao)承受更高(gao)(gao)(gao)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓和(he)(he)(he)(he)電(dian)(dian)(dian)(dian)(dian)(dian)場，這(zhe)對聚(ju)酰(xian)亞(ya)胺薄(bo)膜的(de)(de)(de)絕緣(yuan)性(xing)(xing)(xing)(xing)能(neng)(neng)提出了更高(gao)(gao)(gao)要(yao)求。聚(ju)酰(xian)亞(ya)胺是一種高(gao)(gao)(gao)分(fen)(fen)子(zi)聚(ju)合(he)物，其分(fen)(fen)子(zi)主鏈上含(han)有(you)酰(xian)亞(ya)胺環結(jie)(jie)構(gou)，圖1.1所示(shi)為其典型結(jie)(jie)構(gou)式。酰(xian)亞(ya)胺環結(jie)(jie)構(gou)是一種含(han)有(you)兩個(ge)酰(xian)基（CO）和(he)(he)(he)(he)一個(ge)亞(ya)胺基（NH）的(de)(de)(de)環狀結(jie)(jie)構(gou)，具(ju)(ju)有(you)較高(gao)(gao)(gao)的(de)(de)(de)穩定性(xing)(xing)(xing)(xing)和(he)(he)(he)(he)化(hua)學惰性(xing)(xing)(xing)(xing)。這(zhe)種高(gao)(gao)(gao)分(fen)(fen)子(zi)材料通常(chang)具(ju)(ju)有(you)優(you)異的(de)(de)(de)物理(li)性(xing)(xing)(xing)(xing)能(neng)(neng)，如高(gao)(gao)(gao)強度、高(gao)(gao)(gao)模量、高(gao)(gao)(gao)熔點(dian)和(he)(he)(he)(he)良好的(de)(de)(de)耐腐蝕性(xing)(xing)(xing)(xing)等(deng)。

　　常見的(de)聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)外觀表現為淺黃色(se)和(he)棕色(se)等，這取決于其制備工(gong)藝(yi)和(he)化學結(jie)構。在(zai)(zai)(zai)(zai)(zai)熱性能方面(mian)(mian)，聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)在(zai)(zai)(zai)(zai)(zai)高(gao)(gao)(gao)溫下(xia)具(ju)有(you)較高(gao)(gao)(gao)的(de)穩(wen)定性，能夠在(zai)(zai)(zai)(zai)(zai)400℃以(yi)上的(de)高(gao)(gao)(gao)溫環境中(zhong)長(chang)期使(shi)用(yong)。在(zai)(zai)(zai)(zai)(zai)電(dian)(dian)氣性能方面(mian)(mian)，聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)具(ju)有(you)良好(hao)的(de)絕緣(yuan)性能和(he)抗干擾性能，能夠有(you)效隔離(li)電(dian)(dian)信(xin)號并防止電(dian)(dian)磁干擾。在(zai)(zai)(zai)(zai)(zai)機械性能方面(mian)(mian)，聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)具(ju)有(you)較高(gao)(gao)(gao)的(de)抗張(zhang)強度(du)(du)和(he)楊氏模量，在(zai)(zai)(zai)(zai)(zai)受到較大的(de)應(ying)力(li)時(shi)仍然(ran)保持較好(hao)的(de)機械強度(du)(du)。但在(zai)(zai)(zai)(zai)(zai)實際應(ying)用(yong)中(zhong)，聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)在(zai)(zai)(zai)(zai)(zai)強電(dian)(dian)場下(xia)極易積聚(ju)空間(jian)電(dian)(dian)荷，并發生電(dian)(dian)場畸變，嚴重時(shi)會導致擊穿(chuan)(chuan)(chuan)，這嚴重制約了其在(zai)(zai)(zai)(zai)(zai)高(gao)(gao)(gao)壓電(dian)(dian)力(li)設備等領域的(de)應(ying)用(yong)。研究聚(ju)酰(xian)亞(ya)胺(an)薄(bo)(bo)膜(mo)(mo)(mo)在(zai)(zai)(zai)(zai)(zai)高(gao)(gao)(gao)電(dian)(dian)場下(xia)的(de)空間(jian)電(dian)(dian)荷效應(ying)和(he)擊穿(chuan)(chuan)(chuan)特性對于理解其擊穿(chuan)(chuan)(chuan)機理、改善其擊穿(chuan)(chuan)(chuan)性能、提高(gao)(gao)(gao)電(dian)(dian)子設備的(de)可靠(kao)性具(ju)有(you)非常重要的(de)意義。

　　實驗目的：分別對未改(gai)性和(he)不同(tong)納米含量(liang)(liang)的(de)改(gai)性聚酰亞(ya)胺薄(bo)膜的(de)空間(jian)電荷分布進(jin)行(xing)測(ce)試驗(yan)證不同(tong)納米含量(liang)(liang)下(xia)空間(jian)電荷的(de)注入量(liang)(liang)和(he)偏(pian)移方向以(yi)及(ji)偏(pian)移程度為后續實(shi)驗(yan)做鋪(pu)墊。

　　測試設備：高壓放大器、信號發生器、壓電(dian)傳感器、電(dian)極系統、放(fang)大器、脈沖電(dian)源、高頻(pin)示波器、高壓直流電(dian)源、保(bao)護電(dian)阻與(yu)耦合電(dian)容和屏蔽盒等(deng)。

　　實驗過程：壓電(dian)(dian)(dian)傳(chuan)感(gan)器作(zuo)為(wei)(wei)一種通過聲波(bo)傳(chuan)遞(di)信(xin)號(hao)(hao)的(de)傳(chuan)感(gan)器，用于檢測和反映空間電(dian)(dian)(dian)荷(he)(he)分布信(xin)息(xi)的(de)壓力波(bo)。壓電(dian)(dian)(dian)傳(chuan)感(gan)器輸出的(de)微弱電(dian)(dian)(dian)壓信(xin)號(hao)(hao)經放大(da)器放大(da)后由示(shi)波(bo)器進行采(cai)集測試，信(xin)號(hao)(hao)發生器產生激(ji)勵信(xin)號(hao)(hao)經高壓放大(da)器放大(da)為(wei)(wei)PI薄膜試樣提(ti)供直流(liu)(liu)極(ji)化電(dian)(dian)(dian)場，用于研究在某一特定(ding)直流(liu)(liu)電(dian)(dian)(dian)場下試樣內部的(de)空間電(dian)(dian)(dian)荷(he)(he)分布，當試樣發生絕緣擊(ji)穿(chuan)或其表面(mian)發生沿面(mian)閃(shan)絡(luo)時，保護(hu)電(dian)(dian)(dian)阻具有(you)限制電(dian)(dian)(dian)流(liu)(liu)并防止因電(dian)(dian)(dian)流(liu)(liu)過大(da)而燒壞高壓放大(da)器的(de)作(zuo)用，系統(tong)測量示(shi)意(yi)圖(tu)如圖(tu)1-1。

　　圖1-1測量系(xi)統示(shi)意(yi)圖

　　實驗結果：當PI薄膜(mo)(mo)兩端(duan)施加電壓(ya)后，由于其內部存在(zai)電荷(he)(he)注(zhu)入(ru)和偏移，導致(zhi)薄膜(mo)(mo)內部的空(kong)間(jian)(jian)電荷(he)(he)分(fen)布發生了較(jiao)大變化。陰(yin)陽兩極(ji)(ji)分(fen)別注(zhu)入(ru)了不(bu)(bu)同量的負(fu)極(ji)(ji)性與正極(ji)(ji)性電荷(he)(he)。隨著(zhu)外部施加電壓(ya)時間(jian)(jian)的增長，PI薄膜(mo)(mo)內部的電荷(he)(he)注(zhu)入(ru)也不(bu)(bu)斷進行，最(zui)終導致(zhi)內部空(kong)間(jian)(jian)電荷(he)(he)的積聚逐漸趨于穩定(ding)，測試數據(ju)如圖(tu)2-2。

　　聚酰亞胺薄(bo)膜(mo)基(ji)體內(nei)部一(yi)般不具有整齊有序的結構，其能(neng)帶中往往存(cun)在許多陷(xian)(xian)阱(jing)(jing)能(neng)級。此(ci)外，由(you)于(yu)其經常(chang)工(gong)作于(yu)多種復雜工(gong)況，在各種高溫和(he)高電(dian)場等(deng)外界因素作用下(xia)，會(hui)發生電(dian)老(lao)化和(he)熱老(lao)化，伴隨而來的是分子鏈斷裂、出現孔(kong)洞等(deng)現象(xiang)。這些變化可能(neng)誘發基(ji)體內(nei)部的淺陷(xian)(xian)阱(jing)(jing)變為(wei)(wei)深陷(xian)(xian)阱(jing)(jing)；也可能(neng)使得自由(you)電(dian)荷入陷(xian)(xian)變為(wei)(wei)陷(xian)(xian)阱(jing)(jing)電(dian)荷（陷(xian)(xian)阱(jing)(jing)電(dian)子陷(xian)(xian)阱(jing)(jing)和(he)空穴）等(deng)，導致載(zai)流(liu)子更(geng)容易(yi)被陷(xian)(xian)阱(jing)(jing)俘獲。

　　圖2-2加(jia)壓30min時電(dian)極附(fu)近空間電(dian)荷密(mi)度峰值

　　還可(ke)能(neng)使聚(ju)酰亞(ya)胺(an)薄膜內部(bu)(bu)增加大量的(de)陷(xian)阱(jing)(jing)電(dian)荷(he)，這些陷(xian)阱(jing)(jing)電(dian)荷(he)俘獲并束縛基(ji)體內部(bu)(bu)的(de)自由電(dian)荷(he)，導致空(kong)間(jian)電(dian)荷(he)更容(rong)易(yi)積(ji)(ji)聚(ju)在(zai)聚(ju)酰亞(ya)胺(an)薄膜的(de)電(dian)極端(duan)，從而誘(you)發電(dian)場(chang)畸變。通過納米(mi)粒子對聚(ju)酰亞(ya)胺(an)薄膜進行結(jie)構(gou)改(gai)性(xing)對其(qi)電(dian)學性(xing)質有很大影響。納米(mi)改(gai)性(xing)對聚(ju)酰亞(ya)胺(an)薄膜內部(bu)(bu)空(kong)間(jian)電(dian)荷(he)的(de)積(ji)(ji)聚(ju)有抑制作用。一方(fang)(fang)面(mian)，納米(mi)材(cai)料的(de)高比表面(mian)積(ji)(ji)可(ke)以提(ti)高載流(liu)子的(de)表面(mian)復合效(xiao)率，減(jian)少電(dian)荷(he)的(de)積(ji)(ji)累和(he)空(kong)間(jian)電(dian)荷(he)效(xiao)應(ying)；另(ling)一方(fang)(fang)面(mian)，納米(mi)材(cai)料的(de)能(neng)帶結(jie)構(gou)和(he)能(neng)級分(fen)布與(yu)半導體材(cai)料不同(tong)，可(ke)以調節半導體材(cai)料的(de)電(dian)子結(jie)構(gou)和(he)能(neng)帶結(jie)構(gou)，從而減(jian)小空(kong)間(jian)電(dian)荷(he)效(xiao)應(ying)的(de)影響。

　　高(gao)壓放大器推薦：ATA-67100

圖：ATA-67100高壓放大器指標參數

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