實驗名稱：基于古斯-漢(han)欣效應(ying)的電光開關研究

　　測試設備：高壓放大器、信(xin)號發(fa)生器、示波(bo)器、可(ke)調諧激光器等(deng)。

　　實驗過程：

　　圖一：實(shi)驗裝(zhuang)置(zhi)圖

　　實(shi)(shi)驗(yan)裝置圖如圖一(yi)(yi)(yi)所(suo)示(shi)，波(bo)(bo)(bo)長(chang)為(wei)(wei)860.00nm的(de)(de)激光(guang)從可(ke)調諧激光(guang)器(qi)出(chu)射(she)后，經(jing)過(guo)一(yi)(yi)(yi)偏(pian)振片和兩(liang)(liang)個直(zhi)徑(jing)為(wei)(wei)0.1mm的(de)(de)小(xiao)孔(kong)(kong)得到(dao)TE偏(pian)振和準直(zhi)的(de)(de)激光(guang)再入射(she)到(dao)雙面金屬(shu)包(bao)覆(fu)波(bo)(bo)(bo)導(dao)(dao)的(de)(de)上層金屬(shu)膜上。偏(pian)振片、兩(liang)(liang)個小(xiao)孔(kong)(kong)之間大(da)致相距0.5m，且在(zai)(zai)(zai)光(guang)路中(zhong)插入一(yi)(yi)(yi)平面鏡，以使(shi)光(guang)路更為(wei)(wei)緊(jin)湊(cou)。PMN-PT透明(ming)陶瓷大(da)小(xiao)為(wei)(wei)5.62mm*4.2mm*3.00mm(l*w*h)，并將(jiang)由(you)其構(gou)成的(de)(de)雙面金屬(shu)包(bao)覆(fu)波(bo)(bo)(bo)導(dao)(dao)固(gu)定在(zai)(zai)(zai)一(yi)(yi)(yi)個倍(bei)角(jiao)轉臺上，實(shi)(shi)物照(zhao)片見圖3.13，在(zai)(zai)(zai)雙面金屬(shu)包(bao)覆(fu)波(bo)(bo)(bo)導(dao)(dao)的(de)(de)上下兩(liang)(liang)金屬(shu)膜上通過(guo)導(dao)(dao)電(dian)(dian)銀膠分別引出(chu)電(dian)(dian)極。外(wai)加載(zai)電(dian)(dian)壓先由(you)一(yi)(yi)(yi)個可(ke)編程(cheng)信(xin)(xin)號(hao)(hao)發生器(qi)產(chan)生一(yi)(yi)(yi)個所(suo)需的(de)(de)小(xiao)電(dian)(dian)壓信(xin)(xin)號(hao)(hao)，再由(you)高壓放(fang)大(da)器(qi)進行放(fang)大(da)，最(zui)后加載(zai)到(dao)雙面金屬(shu)包(bao)覆(fu)波(bo)(bo)(bo)導(dao)(dao)的(de)(de)兩(liang)(liang)個電(dian)(dian)極上。一(yi)(yi)(yi)個三(san)孔(kong)(kong)陣(zhen)列，其小(xiao)孔(kong)(kong)直(zhi)徑(jing)為(wei)(wei)0.1mm，小(xiao)孔(kong)(kong)間的(de)(de)距離為(wei)(wei)0.4mm，三(san)孔(kong)(kong)陣(zhen)列在(zai)(zai)(zai)反(fan)射(she)光(guang)方(fang)向精確(que)放(fang)置，以使(shi)無外(wai)加載(zai)電(dian)(dian)壓時，反(fan)射(she)光(guang)能從通道(dao)1通過(guo)。在(zai)(zai)(zai)實(shi)(shi)驗(yan)過(guo)程(cheng)中(zhong)，信(xin)(xin)號(hao)(hao)發生器(qi)產(chan)生的(de)(de)電(dian)(dian)壓信(xin)(xin)號(hao)(hao)和反(fan)射(she)光(guang)強大(da)小(xiao)信(xin)(xin)號(hao)(hao)均由(you)數字示(shi)波(bo)(bo)(bo)器(qi)接(jie)收并測量(liang)。

　　實驗結果：

　　圖二：反射光強及GH位移與外(wai)加(jia)載電壓之間的(de)實驗結(jie)果圖，小圖分別為(wei)外(wai)加(jia)載電壓為(wei)0V，500V，650V時的(de)反射光斑

　　為(wei)(wei)(wei)了(le)測量出光(guang)(guang)波(bo)(bo)(bo)信(xin)號(hao)分(fen)別(bie)從(cong)通道2、3中(zhong)通過所(suo)(suo)需的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)壓(ya)(ya)(ya)，我們先(xian)在反(fan)(fan)(fan)射(she)(she)光(guang)(guang)方向不(bu)(bu)放置三孔(kong)陣列(lie)和(he)光(guang)(guang)電(dian)(dian)(dian)二極(ji)管，而是放置一位(wei)(wei)(wei)(wei)置靈(ling)敏(min)器(PSD)測量出反(fan)(fan)(fan)射(she)(she)光(guang)(guang)GH位(wei)(wei)(wei)(wei)移(yi)大(da)(da)小(xiao)與外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)下之(zhi)間(jian)(jian)的(de)(de)(de)(de)(de)(de)關系。反(fan)(fan)(fan)射(she)(she)光(guang)(guang)強及GH位(wei)(wei)(wei)(wei)移(yi)與外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)之(zhi)間(jian)(jian)關系的(de)(de)(de)(de)(de)(de)實(shi)(shi)驗(yan)結果如(ru)圖(tu)(tu)二所(suo)(suo)示，外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)范圍為(wei)(wei)(wei)0-650V，間(jian)(jian)隔為(wei)(wei)(wei)50V。實(shi)(shi)驗(yan)中(zhong)，入(ru)射(she)(she)角(jiao)固定在反(fan)(fan)(fan)射(she)(she)光(guang)(guang)強最(zui)大(da)(da)的(de)(de)(de)(de)(de)(de)位(wei)(wei)(wei)(wei)置，此處入(ru)射(she)(she)光(guang)(guang)幾乎沒被耦合入(ru)導波(bo)(bo)(bo)層(ceng)，所(suo)(suo)以GH位(wei)(wei)(wei)(wei)移(yi)最(zui)小(xiao)，可(ke)(ke)(ke)作為(wei)(wei)(wei)測量GH位(wei)(wei)(wei)(wei)移(yi)的(de)(de)(de)(de)(de)(de)基準點。信(xin)號(hao)發(fa)生(sheng)器的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)壓(ya)(ya)(ya)信(xin)號(hao)設為(wei)(wei)(wei)頻率(lv)1Hz的(de)(de)(de)(de)(de)(de)矩形波(bo)(bo)(bo)，由于(yu)信(xin)號(hao)頻率(lv)較(jiao)低，所(suo)(suo)以無須高速PSD也可(ke)(ke)(ke)測量GH位(wei)(wei)(wei)(wei)移(yi)的(de)(de)(de)(de)(de)(de)大(da)(da)小(xiao)。因為(wei)(wei)(wei)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)任何電(dian)(dian)(dian)壓(ya)(ya)(ya)后，導波(bo)(bo)(bo)層(ceng)PMN-PT透明(ming)陶瓷的(de)(de)(de)(de)(de)(de)折射(she)(she)率(lv)都會變(bian)大(da)(da)，而厚度都會變(bian)小(xiao)。在外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)較(jiao)低時(shi)(shi)(shi)(shi)，超(chao)(chao)高階導模會向左移(yi)動，這是因為(wei)(wei)(wei)此時(shi)(shi)(shi)(shi)逆(ni)壓(ya)(ya)(ya)電(dian)(dian)(dian)效應(ying)(ying)占主導，從(cong)而導致(zhi)△N<0。當(dang)(dang)(dang)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)超(chao)(chao)過400V后，超(chao)(chao)高階導模開(kai)始(shi)向右(you)移(yi)動，因為(wei)(wei)(wei)有效折射(she)(she)率(lv)與電(dian)(dian)(dian)光(guang)(guang)效應(ying)(ying)成二次關系，當(dang)(dang)(dang)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)較(jiao)高時(shi)(shi)(shi)(shi)，電(dian)(dian)(dian)光(guang)(guang)效應(ying)(ying)開(kai)始(shi)占主導，從(cong)而導致(zhi)△N>0。在實(shi)(shi)驗(yan)原理(li)部分(fen)可(ke)(ke)(ke)知(zhi)，不(bu)(bu)管超(chao)(chao)高階導模是左移(yi)還是右(you)移(yi)，均可(ke)(ke)(ke)使反(fan)(fan)(fan)射(she)(she)光(guang)(guang)強的(de)(de)(de)(de)(de)(de)GH位(wei)(wei)(wei)(wei)移(yi)發(fa)生(sheng)變(bian)化(hua)。當(dang)(dang)(dang)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)從(cong)0V加(jia)(jia)(jia)大(da)(da)至(zhi)200后，GH位(wei)(wei)(wei)(wei)移(yi)從(cong)0μm增(zeng)大(da)(da)到(dao)290μm，再加(jia)(jia)(jia)大(da)(da)至(zhi)400V時(shi)(shi)(shi)(shi)，則GH位(wei)(wei)(wei)(wei)移(yi)減(jian)小(xiao)至(zhi)32μm，外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)繼續加(jia)(jia)(jia)大(da)(da)至(zhi)650V，GH位(wei)(wei)(wei)(wei)移(yi)再次增(zeng)大(da)(da)至(zhi)830μm。圖(tu)(tu)二中(zhong)的(de)(de)(de)(de)(de)(de)三個(ge)小(xiao)圖(tu)(tu)分(fen)別(bie)為(wei)(wei)(wei)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)為(wei)(wei)(wei)0V，500V，650V時(shi)(shi)(shi)(shi)的(de)(de)(de)(de)(de)(de)反(fan)(fan)(fan)射(she)(she)光(guang)(guang)斑(ban)，從(cong)中(zhong)可(ke)(ke)(ke)證(zheng)實(shi)(shi)理(li)論結果，即GH位(wei)(wei)(wei)(wei)移(yi)越大(da)(da)，其反(fan)(fan)(fan)射(she)(she)光(guang)(guang)強越小(xiao)，且光(guang)(guang)斑(ban)半徑會變(bian)大(da)(da)。當(dang)(dang)(dang)外(wai)(wai)加(jia)(jia)(jia)載(zai)(zai)(zai)電(dian)(dian)(dian)壓(ya)(ya)(ya)為(wei)(wei)(wei)830V時(shi)(shi)(shi)(shi)(圖(tu)(tu)二中(zhong)未給出)，反(fan)(fan)(fan)射(she)(she)光(guang)(guang)的(de)(de)(de)(de)(de)(de)GH位(wei)(wei)(wei)(wei)移(yi)達到(dao)最(zui)大(da)(da)值為(wei)(wei)(wei)1040mm，此時(shi)(shi)(shi)(shi)反(fan)(fan)(fan)射(she)(she)光(guang)(guang)的(de)(de)(de)(de)(de)(de)反(fan)(fan)(fan)射(she)(she)率(lv)只有0.11，太大(da)(da)的(de)(de)(de)(de)(de)(de)GH位(wei)(wei)(wei)(wei)移(yi)已不(bu)(bu)適(shi)合用(yong)于(yu)制作電(dian)(dian)(dian)光(guang)(guang)開(kai)關，因為(wei)(wei)(wei)反(fan)(fan)(fan)射(she)(she)光(guang)(guang)斑(ban)會嚴(yan)重變(bian)形甚至(zhi)分(fen)裂。

　　圖三(san)：電(dian)光開關的周期調(diao)制實驗結果圖，調(diao)制周期為20微(wei)秒。

　　當(dang)(dang)設信(xin)號(hao)發(fa)生(sheng)器的(de)頻率(lv)為50kHz時(shi)，基于(yu)GH位移效應(ying)的(de)電(dian)光(guang)(guang)開(kai)光(guang)(guang)實驗響應(ying)結(jie)果如(ru)圖(tu)(tu)三所示。當(dang)(dang)無外加載(zai)(zai)電(dian)壓(ya)(ya)(ya)時(shi)(圖(tu)(tu)三中(zhong)(zhong)未顯示)，反射(she)光(guang)(guang)從(cong)通(tong)道(dao)1出射(she)，其(qi)(qi)插(cha)入損耗為0.22dB，而通(tong)道(dao)2，3相(xiang)對(dui)(dui)于(yu)通(tong)道(dao)1的(de)串擾分(fen)(fen)別(bie)(bie)(bie)(bie)為-29.8dB和-32.7dB。如(ru)圖(tu)(tu)三(a)所示，當(dang)(dang)信(xin)號(hao)發(fa)生(sheng)器產(chan)生(sheng)的(de)電(dian)壓(ya)(ya)(ya)信(xin)號(hao)峰—峰值(zhi)為179mV，偏置電(dian)壓(ya)(ya)(ya)為80mV時(shi)，經(jing)電(dian)壓(ya)(ya)(ya)放(fang)大(da)(da)器放(fang)大(da)(da)后，加載(zai)(zai)在(zai)PMN-PT透明陶瓷上的(de)電(dian)壓(ya)(ya)(ya)為537V，此(ci)時(shi)反射(she)光(guang)(guang)能從(cong)通(tong)道(dao)2出射(she)，其(qi)(qi)插(cha)入損耗在(zai)開(kai)啟狀(zhuang)態(tai)(tai)和關(guan)(guan)(guan)(guan)閉狀(zhuang)態(tai)(tai)分(fen)(fen)別(bie)(bie)(bie)(bie)為3.77dB和36.5dB，通(tong)道(dao)1，3相(xiang)對(dui)(dui)于(yu)通(tong)道(dao)2的(de)串擾分(fen)(fen)別(bie)(bie)(bie)(bie)為-29.2dB和-37.4dB。類(lei)似地，當(dang)(dang)信(xin)號(hao)發(fa)生(sheng)器產(chan)生(sheng)的(de)電(dian)壓(ya)(ya)(ya)信(xin)號(hao)峰-峰值(zhi)為214mV時(shi)，經(jing)電(dian)壓(ya)(ya)(ya)放(fang)大(da)(da)器放(fang)大(da)(da)后其(qi)(qi)外加載(zai)(zai)電(dian)壓(ya)(ya)(ya)為642V，此(ci)時(shi)反射(she)光(guang)(guang)能從(cong)通(tong)道(dao)3出射(she)，其(qi)(qi)插(cha)入損耗在(zai)開(kai)啟狀(zhuang)態(tai)(tai)和關(guan)(guan)(guan)(guan)閉狀(zhuang)態(tai)(tai)分(fen)(fen)別(bie)(bie)(bie)(bie)為6.12dB和41.2dB(見(jian)圖(tu)(tu)三(b))，通(tong)道(dao)1，3相(xiang)對(dui)(dui)于(yu)通(tong)道(dao)2的(de)串擾分(fen)(fen)別(bie)(bie)(bie)(bie)為-32.6dB和-31.3dB。通(tong)道(dao)2，3中(zhong)(zhong)的(de)開(kai)關(guan)(guan)(guan)(guan)時(shi)間如(ru)圖(tu)(tu)三(c)所示，其(qi)(qi)開(kai)啟時(shi)間(定(ding)義(yi)為光(guang)(guang)強從(cong)最大(da)(da)值(zhi)的(de)10%增加到90%所需的(de)時(shi)間)分(fen)(fen)別(bie)(bie)(bie)(bie)為0.42μs和0.28μs，而關(guan)(guan)(guan)(guan)閉時(shi)間(定(ding)義(yi)為光(guang)(guang)強從(cong)最大(da)(da)值(zhi)的(de)90%減小到10%所需的(de)時(shi)間)分(fen)(fen)別(bie)(bie)(bie)(bie)為0.94μs和1.63μs。

　　圖：ATA-67100高壓放大器指標參數

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